Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

NEUTRALIZATION OF H− NEAR Si(100) SURFACES

We calculated the electronic structure of the unreconstructed Si(100) surface within an extended screened Thomas-Fermi pseudopotential method [1]. We derive an effective electronic potential (Fig. 1) from which we obtain singleparticle Kohn-Sham orbitals and their energies. Our calculated density of states (DOS) is in good agreement with the observed DOS from photoemission measurements on Si su...

Nanoscale oxide patterns on Si (100) surfaces

Spectroscopic ellipsometry study

The dielectric functions of InP, IIla.53 Gao.47 As, and 1110.75 Gao.2S Aso.s P 0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to inves...

Spectroscopic-ellipsometric study of native oxide removal by liquid phase HF process

Ex situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effect of liquid-phase hydrofluoric acid (HF) cleaning on Si<100> surfaces for microelectromechanical systems application. The hydrogen terminated (H-terminated) Si surface was realized as an equivalent dielectric layer, and SE measurements are performed. The SE analyses indicate that after a 20-s 100:5 H...

Application of spectroscopic ellipsometry and Mueller ellipsometry to optical characterization.

This article provides a brief overview of both established and novel ellipsometry techniques, as well as their applications. Ellipsometry is an indirect optical technique, in that information about the physical properties of a sample is obtained through modeling analysis. Standard ellipsometry is typically used to characterize optically isotropic bulk and/or layered materials. More advanced tec...